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| 2SJ399 Silicon P-Channel MOS FET ADE-208-267 1st. Edition Application Low frequency power switching Features * * * * * Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SJ399 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 100 s, duty cycle 10% 2. Marking is "ZF-" Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings -30 20 -0.2 -0.4 -0.2 150 150 -55 to +150 Unit V V A A A mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min -30 20 -- -- -1.0 -- -- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss t d(on) tr t d(off) tf -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.7 2.0 1.1 22.3 0.17 530 2170 7640 7690 Max -- -- 2 -1 -2.0 5.0 3.0 -- -- -- -- -- -- -- Unit V V A A V pF pF pF ns ns ns ns Test conditions I D = -100 A, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10 A, VDS = -5 V I D = -20 mA VGS = -4 V*1 I D = -10 mA VGS = -10 V*1 VDS = -10 V VGS = 0 f = 1 MHz I D = -0.1 A VGS = -10 V RL = 100 PW = 5 s Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 2 2SJ399 Pch (mW) Maximum Channel Dissipation Curve 200 I D (A) -1 Maximum Safe Operation Area 1 ms -0.3 -0.1 = s PW0 m 1 150 Channel Power Dissipation Drain Current C D 100 n tio ra pe O -0.03 -0.01 50 Operation in this area is limited by R DS(on) -0.003 Ta = 25 C 0 50 100 150 Ta (C) 200 -0.001 -0.1 -0.3 -1 -3 -10 -30 -100 Ambient Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics -2.0 Pulse Test I D (A) -5 V Typical Transfer Characteristics -0.5 V DS = -10 V -1.2 -4.5 V ID Drain Current (A) -1.6 -0.4 Drain Current -0.3 -4 V -0.8 -3.5 V -3 V -0.2 75 C 25 C Ta = -25 C -0.4 -0.1 -2.5 V VGS = -2 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 3 2SJ399 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) -0.5 Drain to Source Saturation Voltage V DS(on) (V) Static Drain to Source on State Resistance vs. Drain Current 100 Ta = 25 C 50 Pulse Test 20 10 5 VGS = -4 V 2 1 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 -0.4 -0.3 -0.2 A -0.2 -0.1 A -0.1 I D = -0.05 A -10 V 0 -4 -8 -12 Gate to Source Voltage -16 -20 V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 5 I D = -0.2 A -0.05 A -0.1 A V GS = -4 V I D = -0.2 A 2 VGS = -10 V -0.1 A -0.05 A Forward Transfer Admittance vs. Drain Current 1 0.5 Ta = -25 C 0.2 0.1 25 C 75 C 4 3 0.05 0.02 0.01 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 1 0 -40 V DS = -10 V Pulse Test 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 4 2SJ399 Typical Capacitance vs. Drain to Source Voltage 100 50 Capacitance C (pF) Switching Time t (ns) 20 10 5 2 1 0.5 0.2 0.1 0 -10 Crss -20 -30 VGS = 0 f = 1 MHz -40 -50 Ciss Coss 5000 10000 Switching Characteristics tf t d(off) tr t d(on) 2000 1000 500 200 100 VGS = -10 V PW = 5 s -0.2 -0.5 -1 -2 Drain Current I D (A) -5 -0.1 Drain to Source Voltage V DS (V) Reverse Drain Current vs. Source to Drain Voltage -0.5 Reverse Drain Current I DR (A) Pulse Test -0.4 -10 V -0.3 V GS = 0 -0.2 -5 V -0.1 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) 5 Unit: mm 0.65 0.10 3 - 0.4 + 0.05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK -- Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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